Last edited by Zurn
Sunday, May 17, 2020 | History

4 edition of Gettering and Defect Engineering in Semiconductor Technology found in the catalog.

Gettering and Defect Engineering in Semiconductor Technology

H. G. Grimmeiss

Gettering and Defect Engineering in Semiconductor Technology

Gadest "99 (Solid State Phenomena)

by H. G. Grimmeiss

  • 255 Want to read
  • 25 Currently reading

Published by Trans Tech Pubn .
Written in English

    Subjects:
  • Materials science,
  • Semi-conductors & super-conductors,
  • States of matter,
  • Engineering - General,
  • Technology,
  • Science/Mathematics

  • The Physical Object
    FormatHardcover
    Number of Pages628
    ID Numbers
    Open LibraryOL12344515M
    ISBN 103908450470
    ISBN 109783908450474

      This book, first published in , focuses on the application of defects and impurities in current and emerging semiconductor technologies. The role of defects in the evolution of semiconductor technology is now recognized as one of refined control - in density, properties, spatial location, and perhaps even temporal variation during device operating : $ Get this from a library! Gettering and defect engineering in semiconductor technology XIII: GADEST proceedings of the XIIIth International Autumn Meeting, Dölnsee-Schorfheide, north of Berlin, Germany, September Octo [Martin Kittler; H Richter;] -- This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with.

      Buy Gettering and Defect Engineering in Semiconductor Technology: GADEST '95 - Proceedings of the 6th International Autumn Meeting Held in Berlin, Germany, 6th by H. Richter, etc. from Waterstones today! Click and Collect from your local Waterstones or Pages:   First, the fundamentals will be explained, e.g. the analogy between the chemistry of ions in water as a “substrate” and the “chemistry” of point defects in silicon, the most perfect, purest solid material available. Secondly, the application of these fundamental defect engineering principles will be described for various technology by: 2.

    Get this from a library! Gettering and defect engineering in semiconductor technology XV: selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference (GADEST ), September , , Oxford, UK. [J David Murphy;] -- The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, . Gettering and Defect Engineering in Semiconductor Technology ( Bad Staffelstein, Germany) Edited by P. Pichler presents students, academics, researchers, and professionals working in a wide variety of contexts with a collection of peer-reviewed papers selected from research presented at the Gettering and Defect Engineering in Semiconductor.


Share this book
You might also like
Vocational and work-related learning at key stage 4

Vocational and work-related learning at key stage 4

voice on the telephone.

voice on the telephone.

idea of feminism from a Kantian perspective

idea of feminism from a Kantian perspective

new Mercedes-Benz guide

new Mercedes-Benz guide

Benchmarking organisational and IT performance

Benchmarking organisational and IT performance

Consumer prices in the United States 1953-58

Consumer prices in the United States 1953-58

Grace & gumption

Grace & gumption

Science and survival.

Science and survival.

Everest: from the first attempt to the final victory.

Everest: from the first attempt to the final victory.

Bakery products manufacturers.

Bakery products manufacturers.

Measuring devices in composition, spelling and arithmetic

Measuring devices in composition, spelling and arithmetic

Creativeness for engineers

Creativeness for engineers

Ariel

Ariel

Ghosted

Ghosted

Mellon

Mellon

Gettering and Defect Engineering in Semiconductor Technology by H. G. Grimmeiss Download PDF EPUB FB2

Gettering and Defect Engineering in Semiconductor Technology XI: Proceedings of the 11th International Autumn Meeting Giens Close to Marseilles, France September(Solid State Phenomena)Author: B. Pichaud. Gettering and Defect Engineering in the Semiconductor Technology [Not Available] on *FREE* shipping on qualifying offers.

: Gettering and Defect Engineering in Semiconductor Technology XV: Selected Papers from the 15th Gettering and Defect Engineering in SemiconductorOxford Uk (Solid State Phenomena) (): J.

Murphy: Books. The current book summarises the key issues of this other topics, the outlook for silicon wafer technology and silicon materials engineering in the next millennium is reviewed and new approaches to the production of a GHz silicon-based devices are described.

The CH 4 N ion‐implanted epitaxial Si wafer has two kinds of defects; C agglomeration defects and stacking faults. These defects contribute to high metal gettering capability and retention capability for H, C, and N. More details can be found in article number by Akihiro Suzuki, Kazunari Kurita, and co‐workers.

Volume is indexed by Thomson Reuters CPCI-S (WoS). The papers contained herein cover the most important and timely issues in the field of “Gettering and Defect Engineering in Semiconductor Technology”, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials.

The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. Volume is indexed by Thomson Reuters CPCI-S (WoS).The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; : J.D. Murphy. Review from Ringgold Inc., ProtoView: Editor P.

Pichler presents students, academics, researchers, and professionals working in a wide variety of contexts with a collection of peer-reviewed papers selected from research presented at the Gettering and Defect Engineering in Semiconductor Technology conference held in September of in Germany.

The editor has organized the contributions that Author: Peter Pichler. Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing.

Gettering techniques remain of key importance in enhancing the device. GADEST was established in in the former German Democratic Republic with the intention to bring together scientists from east and west in an international conference in the field of semiconductor device technology and defect : Gudrun Kissinger, Dawid Kot, Hans Richter, Marvin Zöllner.

Gettering and Defect Engineering in Semiconductor Technology (GADEST ) Gudrun Kissinger, Dawid Kot, Hans Richter, and Marvin Zöllner This issue contains 49 articles documenting a selection of con-tributions of the international conference GADEST which is held Septemberin Zeuthen, Germany.

It is the. Special Issue: GADEST ‐ Gettering and Defect Engineering in Semiconductor Technology: October 1st to 6th,Lopota resort, Georgia.

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY GADEST '93 Proceedings of the 5th International Autumn Meeting held in Chossewitz, near Frankfurt (Oder), Germany October 09 - 14, Editors H. Grimmeiss, M. Kittler and H. Richter. Gettering of Au in Heat Treated Si/SiGe/Si Structures K. Schmalz, D.

Kriiger, R. Kurps, Th. Morgenstern and H.P. Zeindl Gettering of Low Concentration Copper, Nickel and Iron Contamination in Czochralski Silicon Wafers Z. Laczik, L. Bouwhuis, G.R. Booker and R. Falster Defect Engineering for Silicon-on-lnsulator, MeV Implantation and.

Gettering and Defect Engineering in Semiconductor Technology Solid State Phenomena Vols. Gettering and Defect Engineering in Semiconductor Technology.

Gettering and defect engineering in semiconductor technology; proceedings. Int'l Conference on Gettering and Defect Engineering in Semiconductor Technology (15th: Oxford, UK) Ed. by J.D. Murphy. Trans Tech Publications pages $ Solid state phenomena; vs TK The GADEST conference series provides an international forum on Gettering and Defect Engineering in Semiconductor Technology for experts in the field of semiconductor technology, semiconductor device physics and defect physics.

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY GADEST 91 Proceedings of the 4th-International Autumn Meeting held in Chossewitz, near Frankfurt (Oder), Germany October Editors M. Kittler and H. Richter i: i: I ' ' • • • SOL/D STATE PHENOMENA VOLUMES 19 & 18th Conference - Gettering and Defect Engineering in Semiconductor Technology - GADEST - September- Seehotel Zeuthen, Germany.

Proceedings of the 7th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology - GADEST '97 - Spa, Belgium - October- Preface. GETTERING AND DEFECT ENGINEERING IN THE SEMICONDUCTOR TECHNOLOGY GADEST '89 Garzau, German Democratic Republic OctoberEdited by M.

Kittler (UNIVERS!TATSB!BUOTHEK^ TECriM'SCHE LIOTHEK ; SCI .Gettering and defect engineering in semiconductor technology XV. Durnten-Zurich: Trans Tech publications Ltd, [] (OCoLC) Material Type: Conference publication, Document, Internet resource: Document Type: Internet Resource, Computer File: All Authors / Contributors: J D Murphy.Research presented at Conference on Gettering and Defect Engineering in Semiconductor Technology GADEST.

Explore 5 events, speakers and authors.